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MCTA65P100F1 Dataheets PDF



Part Number MCTA65P100F1
Manufacturers Intersil
Logo Intersil
Description 65A / 1000V P-Type MOS Controlled Thyristor
Datasheet MCTA65P100F1 DatasheetMCTA65P100F1 Datasheet (PDF)

Semiconductor April 1999 CES PRO S NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 JEDEC STYLE TO-247 ANODE ANODE CATHODE GATE RETURN GATE 65A, 1000V P-Type MOS Controlled Thyristor (MCT) Package Features • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC • 2000A Surge Current Capability • 2000A/µs di/dt Capability • MOS Insulated Gate Control • 100A Gate Turn-Off Capability at +150oC CATHODE (FLANGE) Description The MCT is an MOS Controlled Thyristor desig.

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Semiconductor April 1999 CES PRO S NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 JEDEC STYLE TO-247 ANODE ANODE CATHODE GATE RETURN GATE 65A, 1000V P-Type MOS Controlled Thyristor (MCT) Package Features • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC • 2000A Surge Current Capability • 2000A/µs di/dt Capability • MOS Insulated Gate Control • 100A Gate Turn-Off Capability at +150oC CATHODE (FLANGE) Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive voltage control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. PART NUMBER INFORMATION PART NUMBER MCTV65P100F1 MCTA65P100F1 PACKAGE TO-247 MO-093AA BRAND M65P100F1 M65P100F1 JEDEC MO-093AA (5-LEAD TO-218) ANODE ANODE CATHODE GATE RETURN GATE CATHODE (FLANGE) Symbol G A K NOTE: When ordering, use the entire part number. Formerly TA9900. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified MCTV65P100F1 MCTA65P100F1 UNITS V V A A A A V V A/µs W W/oC oC oC Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Cathode Current (See Figure 2) TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Non-Repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (0.063" (1.6mm) from case for 10s) NOTE: VRRM IK25 IK90 ITSM ITC VGA VGA dv/dt di/dt PT TJ, TSTG TL -1000 +5 85 65 2000 100 ±20 ±25 See Figure 11 2000 208 1.67 -55 to +150 260 1. Maximum Pulse Width of 200µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1999 File Number 3516.5 2-13 Specifications MCTV65P100F1, MCTA65P100F1 Electrical Specifications PARAMETER Peak Off-State Blocking Current TC = +25oC Unless Otherwise Specified SYMBOL IDRM TEST CONDITIONS VKA = -1000V, VGA = +18V TC = +150oC TC = +25oC TC = +150oC TC = +25oC TC = +150oC TC = +25oC MIN TYP MAX 3 100 4 100 1.4 1.5 200 UNITS mA µA mA µA V V nA Peak Reverse Blocking Current IRRM VKA = +5V, VGA = +18V On-State Voltage VTM IK = IK90, VGA = -10V VGA = ±20V VKA = -20V, TJ = +25oC VGA = +18V L = 200µH, IK = IK90 = 65A RG = 1Ω, VGA = +18V, -7V TJ = +125oC VKA = -400V Gate-Anode Leakage Current Input Capacitance IGAS CISS - 10 - nF Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy Thermal Resistance tD(ON)I - 120 - ns tRI tD(OFF)I - 160 750 - ns ns tFI EOFF RθJC - 1.45 18 0.5 1.9 0.6 µs mJ oC/W Typical Performance Curves PULSE TEST PULSE DURATION = 250µs DUTY CYCLE < 2% 100 IK, DC CATHODE CURRENT (A) 90 80 70 60 50 40 30 20 10 0 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 PACKAGE LIMIT IK, CATHODE CURRENT (A) 100 TJ = +150oC TJ = +25oC TJ = -40oC 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VTM, CATHODE VOLTAGE (V) TC, CASE TEMPERATURE (oC) FIGURE 1. CATHODE CURRENT v.


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