Document
MCT6H/ MCT62H
Vishay Telefunken
Dual Channel Optocoupler with Phototransistor Output
Description
The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
Applications
Galvanically separated switches circuits, non-interacting
14838
Features
D Current Transfer Ratio (CTR) of typical 100% D Isolation test voltage VIO = 5 kV D Low temperature coefficient of CTR D Low coupling capacitance of typical 0.3 pF D Wide ambient temperature range D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
8
7
6
5
1
2
3
4
D CSA (C–UL) 1577 recognized, file number
E-76222 – Double Protection
D Coupling System U
C
Order Instruction
Ordering Code MCT6H MCT62H CTR Ranking > 50% > 100% Remarks
Rev. A1, 11–Jan–99
95 10809
201
MCT6H/ MCT62H
Vishay Telefunken Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 1.5 100 125 Unit V mA A mW °C
tp ≤ 10 ms Tamb ≤ 25°C
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW °C
tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C
Coupler
Parameter Test Conditions AC isolation test voltage (RMS) t = 1 min Total power dissipation Tamb ≤ 25°C Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t ≤ 10 s 1) Related to standard climate 23/50 DIN 50014 Symbol VIO 1) Ptot Tamb Tstg Tsd Value 5 250 –40 to +100 –55 to +125 260 Unit kV mW °C °C °C
202
Rev. A1, 11–Jan–99
MCT6H/ MCT62H
Vishay Telefunken Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter Forward voltage Test Conditions IF = 50 mA Symbol VF Min. Typ. 1.25 Max. 1.6 Unit V
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA
100
Coupler
Parameter DC isolation test voltage Isolation resistance Collector emitter saturation voltage Cut-off frequency Test Conditions t=2s VIO = 1000 V, 40% relative humidity IF = 10 mA, IC = 1 mA Symbol VIO1) RIO 1) VCEsat fC Ck 100 0.3 Min. 5 Typ. 1012 0.3 Max. Unit kV
W
V
IF = 10 mA, VCE = 5 V, RL = 100 W Coupling capacitance f = 1 MHz 1) Related to standard climate 23/50 DIN 50014
kHz pF
Current Transfer Ratio (CTR)
Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 5 mA Type MCT6H MCT6H MCT62H Symbol CTR CTR CTR Min. 0.5 0.6 1 Typ. 1 1.2 2 Max. Unit
Rev. A1, 11–Jan–99
203
MCT6H/ MCT62H
Vishay Telefunken Switching Characteristics
Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W ( (see figure g 1) ) Symbol td tr tf ts ton toff Typ. 3.0 3.0 4.7 0.3 6.0 5.0 Unit ms ms ms ms ms ms
96 11698
IF 0 IF IF +5V IC = 2 mA ; Adjusted through input amplitude 0 tp IC 100% 90% Channel I Channel II Oscilloscope RL = 1 M W CL = 20 pF 10% 0 tr td ton tp tion td tr ton (= td + tr) pulse duradelay time rise time turn-on time ts toff ts tf toff (= ts + tf) storage time fall time turn-off time tf t t
RG = 50 W tp = 0.01 T tp = 50 ms
50
95 10804
W
100
W
Figure 1. Test circuit, non-saturated operation
Figure 2. Switching times
204
Rev. A1, 11–Jan–99
MCT6H/ MCT62H
Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 P tot – Total Power Dissipation ( mW ) Coupled device ICEO– Collector Dark Current, with open Base ( nA ) 250 200 Phototransistor 150 IR-diode 100 50 0 0
96 11700
10000 VCE=20V IF=0 1000
100
10
1 40 80 120
96 11928
0
10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C )
Figure 3. Total Power Dissipation vs. Ambient Temperature
1000.0
Tamb – Ambient Temperature ( °C )
Figure 6. Collector Dark Current vs. Ambient Temperature
100.00 VCE=5V
I F – Forward Current ( mA )
100.0
IC – Collector Current ( mA ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V )
10.00
10.0
1.00
1.0
0.10
0.1
96 11862
0.01 0.1
96 11929
1.0
10.0
100.0
IF – Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
CTR rel – Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80
Figure 7. Collector Current vs. Forward Current
100.0 IC – Collector Current ( mA )
VCE=5V IF=5mA
IF=50mA
20mA
10.0
10mA 5mA
1.0
2mA 1mA
0.1 0.1
96 11930
1.0
10.0
100.0
96 11927
Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature
Tamb – Ambien.