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MCT6H Dataheets PDF



Part Number MCT6H
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Dual Channel Optocoupler with Phototransistor
Datasheet MCT6H DatasheetMCT6H Datasheet (PDF)

MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Galvanically separated switches circuits, non-interacting 14838 Features D C.

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MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Galvanically separated switches circuits, non-interacting 14838 Features D Current Transfer Ratio (CTR) of typical 100% D Isolation test voltage VIO = 5 kV D Low temperature coefficient of CTR D Low coupling capacitance of typical 0.3 pF D Wide ambient temperature range D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 8 7 6 5 1 2 3 4 D CSA (C–UL) 1577 recognized, file number E-76222 – Double Protection D Coupling System U C Order Instruction Ordering Code MCT6H MCT62H CTR Ranking > 50% > 100% Remarks Rev. A1, 11–Jan–99 95 10809 201 MCT6H/ MCT62H Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 1.5 100 125 Unit V mA A mW °C tp ≤ 10 ms Tamb ≤ 25°C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW °C tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Test Conditions AC isolation test voltage (RMS) t = 1 min Total power dissipation Tamb ≤ 25°C Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t ≤ 10 s 1) Related to standard climate 23/50 DIN 50014 Symbol VIO 1) Ptot Tamb Tstg Tsd Value 5 250 –40 to +100 –55 to +125 260 Unit kV mW °C °C °C 202 Rev. A1, 11–Jan–99 MCT6H/ MCT62H Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Test Conditions IF = 50 mA Symbol VF Min. Typ. 1.25 Max. 1.6 Unit V Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA 100 Coupler Parameter DC isolation test voltage Isolation resistance Collector emitter saturation voltage Cut-off frequency Test Conditions t=2s VIO = 1000 V, 40% relative humidity IF = 10 mA, IC = 1 mA Symbol VIO1) RIO 1) VCEsat fC Ck 100 0.3 Min. 5 Typ. 1012 0.3 Max. Unit kV W V IF = 10 mA, VCE = 5 V, RL = 100 W Coupling capacitance f = 1 MHz 1) Related to standard climate 23/50 DIN 50014 kHz pF Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 5 mA Type MCT6H MCT6H MCT62H Symbol CTR CTR CTR Min. 0.5 0.6 1 Typ. 1 1.2 2 Max. Unit Rev. A1, 11–Jan–99 203 MCT6H/ MCT62H Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W ( (see figure g 1) ) Symbol td tr tf ts ton toff Typ. 3.0 3.0 4.7 0.3 6.0 5.0 Unit ms ms ms ms ms ms 96 11698 IF 0 IF IF +5V IC = 2 mA ; Adjusted through input amplitude 0 tp IC 100% 90% Channel I Channel II Oscilloscope RL = 1 M W CL = 20 pF 10% 0 tr td ton tp tion td tr ton (= td + tr) pulse duradelay time rise time turn-on time ts toff ts tf toff (= ts + tf) storage time fall time turn-off time tf t t RG = 50 W tp = 0.01 T tp = 50 ms 50 95 10804 W 100 W Figure 1. Test circuit, non-saturated operation Figure 2. Switching times 204 Rev. A1, 11–Jan–99 MCT6H/ MCT62H Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 300 P tot – Total Power Dissipation ( mW ) Coupled device ICEO– Collector Dark Current, with open Base ( nA ) 250 200 Phototransistor 150 IR-diode 100 50 0 0 96 11700 10000 VCE=20V IF=0 1000 100 10 1 40 80 120 96 11928 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) Figure 3. Total Power Dissipation vs. Ambient Temperature 1000.0 Tamb – Ambient Temperature ( °C ) Figure 6. Collector Dark Current vs. Ambient Temperature 100.00 VCE=5V I F – Forward Current ( mA ) 100.0 IC – Collector Current ( mA ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 10.00 10.0 1.00 1.0 0.10 0.1 96 11862 0.01 0.1 96 11929 1.0 10.0 100.0 IF – Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage CTR rel – Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 Figure 7. Collector Current vs. Forward Current 100.0 IC – Collector Current ( mA ) VCE=5V IF=5mA IF=50mA 20mA 10.0 10mA 5mA 1.0 2mA 1mA 0.1 0.1 96 11930 1.0 10.0 100.0 96 11927 Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature Tamb – Ambien.


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