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MCT5210 Dataheets PDF



Part Number MCT5210
Manufacturers Siemens Group
Logo Siemens Group
Description AlGaAs LED/ Phototransistor Optocoupler
Datasheet MCT5210 DatasheetMCT5210 Datasheet (PDF)

MCT5210 MCT5211 AlGaAs LED/ Phototransistor Optocoupler FEATURES • Current Transfer Ratio MCT5210, >70% at IF=3.0 mA MCT5211, >110% at IF=1.0 mA • Saturation CTR–MCT5211, >100% at IF=1.6 mA • High Isolation Voltage, 5300 VACRMS • Underwriters Lab File #E52744 • VDE #0884 Available with Option 1 DESCRIPTION The MCT5210/5211 are optocouplers with a high efficiency AlGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The cou.

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MCT5210 MCT5211 AlGaAs LED/ Phototransistor Optocoupler FEATURES • Current Transfer Ratio MCT5210, >70% at IF=3.0 mA MCT5211, >110% at IF=1.0 mA • Saturation CTR–MCT5211, >100% at IF=1.6 mA • High Isolation Voltage, 5300 VACRMS • Underwriters Lab File #E52744 • VDE #0884 Available with Option 1 DESCRIPTION The MCT5210/5211 are optocouplers with a high efficiency AlGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a double molded, six pin DIP package. Isolation test voltage is 5300 VACRMS. Because these parts have guaranteed CTRs at one and three mA, they are ideally suitable for interfacing from CMOS to TTL or LSTTL to TTL. They are also ideal for telecommunications applications such as ring or off-hook detection. Maximum Ratings Emitter Peak Reverse Voltage ............................................ 6 V Continuous Forward Current .............................40 mA Power Dissipation at 25°C................................. 75 mW Derate Linearly from 25°C .......................... 1.0 mW/°C Detector Collector-Emitter Breakdown Voltage.................... 30 V Emitter-Collector Breakdown Voltage...................... 7 V Collector-Base Breakdown Voltage....................... 70 V Power Dissipation............................................ 200 mW Derate Linearly from 25°C .......................... 2.6 mW/°C Package Isolation Test Voltage..............................5300 VACRMS Total Package Dissipation at 25°C Ambient (LED + Detector) .............. 260 mW Derate Linearly from 25°C .......................... 3.5 mW/°C Leakage Path ............................................. 7 mm min. Clearance Path............................................ 7 mm min. Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 ........................... 175 Isolation Resistance VIO=500 V, TA=25°C .................................... ≥1012 Ω VIO=500 V, TA=100°C .................................. ≥1011 Ω Operating Temperature ..................... –55°C to +100°C Storage Temperature......................... –55°C to +150°C Dimensions in inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 2 1 Anode 1 Cathode 2 4 5 6 6 5 4 .300 (7.62) typ. Base Collector Emitter .335 (8.50) .343 (8.70) .039 (1.00) min. 4° typ. .018 (0.45) .022 (0.55) .048 (1.22) .052 (1.32) NC 3 .130 (3.30) .138 (3.50) 18° .031 (.080) min. .031 (.80) .035 (.90) .100 (2.54) typ. 3°–9° .010 (.25) typ. .300–.347 (7.62–8.81) .114 (2.90) .130 (3.30) Electrical Characteristics (25°C) Parameter Emitter Forward Voltage Reverse Voltage Detector HFE BVCEO BVECO BVCBO ICEO Package (0–70°C) Saturated Current Transfer Ratio MCT5210 MCT5211 MCT5211 MCT5210 MCT5211 MCT5211 MCT5210 MCT5211 MCT5211 Saturation Voltage MCT5210 MCT5211 Symbol VF VR Min. Typ. 1.2 Max. Unit 1.5 V V Condition IF=5 mA IR=10 µA VCE=5 V IC=100 µA 6 100 30 7 70 5 100 200 V V V nA IC=100 µA IE=100 µA IE=10 µA VCE=10 V VCE=0.4 V CTRCEsat CTRCEsat CTRCEsat CTR CTR CTR CTRCB CTRCB CTRCB VCEsat VCEsat 60 100 75 70 150 110 0.2 0.3 0.25 120 200 150 150 300 225 0.4 0.6 0.5 0.25 0.25 % % % % % % % % % 0.4 0.4 IF=3.0 mA IF=1.6 mA IF=1.0 mA VCE=5.0 V IF=3.0 mA IF=1.6 mA IF=1.0 mA VCE=4.3 V IF=3.0 mA IF=1.6 mA IF=1.0 mA IF=3.0 mA IC=1.8 mA IF=1.6 mA IC=1.6 mA Current Transfer Ratio Collector-Base Current Transfer Ratio V V 1 Characteristics — continued Parameter Symbol Min. Typ. Max. Unit Condition Switching Characteristics (25°C) Propagation Delay —High to Low MCT5210 MCT5211 MCT5211 MCT5210 MCT5211 MCT5211 tPHL tPHL tPHL tPLH tPLH tPLH 10 20 40 10 20 40 µs µs µs µs µs µs RL=330 Ω, IF=3.0 mA, VCC=5.0 V RL=750 Ω, IF=1.6 mA, VCC=5.0 V RL=1.5 Ω, IF=1.0 mA, VCC=5.0 V RL=330 Ω, IF=3.0 mA, VCC=5.0 V RL=750 Ω, IF=1.6 mA, VCC=5.0 V RL=1.5 Ω, IF=1.0 mA, VCC=5.0 V Propagation Delay —Low to High Figure 1. Forward current vs. forward voltage FORWARD VOLTAGE 35 30 Ta = 25°C IF - LED Current - mA 25 20 15 10 5 0 1.0 Figure 4. Collector base photocurrent vs. LED current S CU 300 250 Ta = 25°C 200 150 100 50 0 Icb - PHOTOCURRENT - µA Figure 7. Collector base current transfer ratio vs. LED current 1.0 CTRcb - COLLECTOR BASE - CTR - % 0.8 0.6 TA = 25°C 0.4 0.2 0.0 0 5 10 15 20 25 IF - LED CURRENT - mA 30 35 1.1 1.2 1.3 VF - LED Forward Voltage - V 1.4 0 5 10 15 20 25 30 35 40 IF - LED CURRENT - mA Figure 2. LED forward current vs. forward voltage 100 IF - LED CURRENT - mA Figure 5. Photocurrent vs. LED current 1000 Icb - PHOTOCURRENT - µA Ta = 25°C 100 Figure 8. Collector base current transfer ratio vs. LED current 1.0 CTRcb - COLLECTOR BASE - CTR - % 0.8 Ta = 25°C 10 0.6 TA = 25°C 0.4 10 1 1 0.2 .1 1.0 .1 1.1 1.2 1.3 VF - LED FORWARD VOLTAGE - V 1.4 .1 1 10 100 IF - LED CURRENT - mA 0.0 .1 1 10 IF - LED CURRENT - mA 100 Figure 3. Switching waveform IF Figure 6. Switching schematic Figure 9. Current transfer ratio ratio vs. LED current 700 Ta = 25°C 600 500 Vce .


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