MCT3A65P100F2

Semiconductor April 1999 PRO CE IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O MCT3A65P100F2, MCT3D65P100F2 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT) [ /Title (MCT3 A65P1 00F2, MCT3 D65P1 00F2) /Subject (65A, 1000V, PType MOSControlled Thyristor (MCT) ) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW Features 65A, -1000V VTM = -1.4V (Max) at I = 65A and 150oC 2000A Surge Current Capability 2000A/µs di/dt Capability MOS Insulated Gate Control 100A Gate Turn-Off Capability at 150oC Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches, and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to 150oC with active switching. BRAND M65P100F2 M65P100F2 Part Number Information PART NUMBER MCT3A65P100F2 MCT3D65P100F2 NOTE: PACKAGE TO-247 MO-093AA Formerly developmental type TA49226. Symbols ANODE (ANODE KELVIN) GATE RETURN GATE GATE ANODE When ordering, use the entire part number. CATHODE CAT...