MCR8S

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR8S/D Advance Information Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. Blocking Voltage to 800 Volts On-State Current Rating of 8 Amperes RMS High Surge Current Capability — 90 Amperes Industry Standard TO–220AB Package for Ease of Design Glass Passivated Junctions for Reliability and Uniformity Low Trigger Currents, 200µA Maximum for Direct Driving from Integrated Circuits *Motorola preferred devices MCR8S SERIES* SCRs 8 AMPERES RMS 400 thru 800 VOLTS A K A G CASE 221A–06 (TO-220AB) Style 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = –40 to 110°C; RGK = 1.0 KΩ) Symbol VDRM VRRM MCR8SD MCR8SM MCR8SN IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 400 600 800 8 90 34 5.0 0.5 2.0 – 40 to +110 – 40 to +150 A A A2sec Watts Watts A °C °C Value Unit Volts On-State RMS Current (All Conduction Angles) Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range TH...