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MCR718 Dataheets PDF



Part Number MCR718
Manufacturers ON
Logo ON
Description Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
Datasheet MCR718 DatasheetMCR718 Datasheet (PDF)

MCR716, MCR718 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control, process control, temperature, light and speed control. Features http://onsemi.com • • • • • • Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Surface Mount Lead Form − Case 369C Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Mo.

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MCR716, MCR718 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control, process control, temperature, light and speed control. Features http://onsemi.com • • • • • • Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Surface Mount Lead Form − Case 369C Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V SCRs 4.0 AMPERES RMS 400 − 600 VOLTS G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR716 MCR718 On−State RMS Current (180° Conduction Angles; TC = 90°C) Average On−State Current (180° Conduction Angles; TC = 90°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.3 msec) Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TC = 90°C) Forward Average Gate Power (t = 8.3 msec, TC = 90°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 msec, TC = 90°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 IT(RMS) IT(AV) ITSM 4.0 2.6 25 A A A 1 I2t PGM PG(AV) IGM TJ Tstg 2.6 0.5 0.1 0.2 −40 to +110 −40 to +150 A2sec W W A °C °C 2 3 4 Y WW x = Year = Work Week = 6 or 8 Value Unit V 1 2 3 4 DPAK CASE 369C STYLE 4 MARKING DIAGRAM YWW MC R71x PIN ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2004 1 August, 2004 − Rev. 4 Publication Order Number: MCR716/D MCR716, MCR718 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol RqJC RqJA TL Max 3.0 80 260 Unit °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current; RGK = 1 kW (Note 3) (VAK = Rated VDRM .


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