MCR716T4

MCR716, MCR718 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control, process control, temperature, light and speed control. Features http://onsemi.com Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Surface Mount Lead Form − Case 369C Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V SCRs 4.0 AMPERES RMS 400 − 600 VOLTS G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR716 MCR718 On−State RMS Current (180° Conduction Angles; TC = 90°C) Average On−State Current (180° Conduction Angles; TC = 90°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.3 msec) Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TC = 90°C) Forward Average Gate Power (t = 8.3 msec, TC = 90°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 msec, TC = 90°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 IT(RMS) IT(AV) ITSM 4.0 2.6 25 A A A 1 I2t PGM PG(AV) IGM TJ Tstg 2.6 0.5 0.1 0.2 −40 to +110 −40 to +150 A2sec W W A °C °C 2 3 4 Y WW x = Year = Work Week = 6 or 8 Value Unit V 1 2 3 4 DPAK CASE 369C STYLE 4 MARKING DIAGRAM YWW MC R71x PI...