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M48T35AY Dataheets PDF



Part Number M48T35AY
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 256 Kbit 32Kb x8 TIMEKEEPER SRAM
Datasheet M48T35AY DatasheetM48T35AY Datasheet (PDF)

M48T35AY M48T35AV 256 Kbit (32Kb x8) TIMEKEEPER® SRAM s INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE™ RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS BATTERY LOW FLAG (BOK) FREQUENCY TEST OUTPUT for REAL TIME CLOCK AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect Voltage): – M48T35AY: 4.2V ≤ V PFD ≤ 4.5V – M48T35AV: 2.7V ≤ VPFD ≤ 3.0V SNAPHAT (SH) Ba.

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M48T35AY M48T35AV 256 Kbit (32Kb x8) TIMEKEEPER® SRAM s INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE™ RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS BATTERY LOW FLAG (BOK) FREQUENCY TEST OUTPUT for REAL TIME CLOCK AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect Voltage): – M48T35AY: 4.2V ≤ V PFD ≤ 4.5V – M48T35AV: 2.7V ≤ VPFD ≤ 3.0V SNAPHAT (SH) Battery/Crystal s s s s 28 28 1 1 s s SOH28 (MH) PCDIP28 (PC) Battery/Crystal CAPHAT s SELF-CONTAINED BATTERY and CRYSTAL in the CAPHAT DIP PACKAGE SOIC PACKAGE PROVIDES DIRECT CONNECTION for a SNAPHAT HOUSING CONTAINING the BATTERY and CRYSTAL SNAPHAT® HOUSING (BATTERY and CRYSTAL) is REPLACEABLE PIN and FUNCTION COMPATIBLE with JEDEC STANDARD 32Kb x8 SRAMs Figure 1. Logic Diagram s VCC s 15 A0-A14 8 DQ0-DQ7 s DESCRIPTION The M48T35AY/35AV TIMEKEEPER ® RAM is a 32Kb x8 non-volatile static RAM and real time clock. The monolithic chip is available in two special packages to provide a highly integrated battery backed-up memory and real time clock solution. The M48T35AY/35AV is a non-volatile pin and function equivalent to any JEDEC standard 32Kb x8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special write timing or limitations on the number of writes that can be performed. W E G M48T35AY M48T35AV VSS AI02797B May 2000 1/19 M48T35AY, M48T35AV Figure 2A. DIP Connections Figure 2B. SOIC Connections A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 28 1 27 2 26 3 25 4 24 5 23 6 7 M48T35AY 22 8 M48T35AV 21 20 9 19 10 18 11 17 12 13 16 14 15 AI02798B VCC W A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 M48T35AY 8 M48T35AV 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC W A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 AI02799 Table 1. Signal Names A0-A14 DQ0-DQ7 E G W VCC VSS Address Inputs Data Inputs / Outputs Chip Enable Output Enable Write Enable Supply Voltage Ground The 28 pin 600mil DIP CAPHAT™ houses the M48T35AY/35AV silicon with a quartz crystal and a long life lithium button cell in a single package. The 28 pin 330mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT housing containing the battery and crystal. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery and crystal damage due to the high temperatures required for device surfacemounting. The SNAPHAT housing is keyed to prevent reverse insertion. The SOIC and battery/crystal packages are shipped separately in plastic anti-static tubes or in Tape & Reel form. For the 28 lead SOIC, the battery/crystal package (i.e. SNAPHAT) part number is "M4T28BR12SH1". As Figure 3 shows, the static memory array and the quartz controlled clock oscillator of the M48T35AY/35AV are integrated on one silicon chip. The two circuits are interconnected at the upper eight memory locations to provide user accessible BYTEWIDE™ clock information in the bytes with addresses 7FF8h-7FFFh. The clock locations contain the year, month, date, day, hour, minute, and second in 24 hour BCD format. Corrections for 28, 29 (leap year), 30, and 31 day months are made automatically. Byte 7FF8h is the clock control register. This byte controls user access to the clock information and also stores the clock calibration setting. 2/19 M48T35AY, M48T35AV Table 2. Absolute Maximum Ratings (1) Symbol TA TSTG TSLD (2) VIO Parameter Grade 1 Ambient Operating Temperature Grade 6 Storage Temperature (VCC Off, Oscillator Off) Lead Solder Temperature for 10 seconds M48T35AY Input or Output Voltages M48T35AV M48T35AY VCC IO PD Supply Voltage M48T35AV Output Current Power Dissipation –0.3 to 4.6 20 1 V mA W –0.3 to 4.6 –0.3 to 7 V V –40 to 85 –40 to 85 260 –0.3 to 7 °C °C °C V Value 0 to 70 Unit °C Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect reliability. 2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds). CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode. Table 3. Operating Modes (1) Mode Deselect Write Read Read Deselect Deselect VSO to VPFD (min) (2) ≤ VSO 4.5V to 5.5V or 3.0V to 3.6V VCC E VIH VIL VIL VIL X X G X X VIL VIH X X W X.


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