Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
M39208
Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
PRELIMINARY DATA
2.7V to 3.6V SUPPLY VOLTAGE for PRO...
Description
M39208
Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
PRELIMINARY DATA
2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 100ns ACCESS TIME (Flash and EEPROM blocks) WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while writing to EEPROM) 100,000 ERASE/WRITE CYCLES 10 YEARS DATA RETENTION LOW POWER CONSUMPTION – Stand-by mode: 60µA – Automatic Stand-by mode – Deep Power Down mode 64 bytes ONE TIME PROGRAMMABLE MEMORY STANDARD EPROM/OTP MEMORY PACKAGE EXTENDED TEMPERATURE RANGES DESCRIPTION The M39208 is a memory device combining Flash and EEPROM into a single chip and using single supply voltage. The memory is mapped in two blocks: 2 Mbit of Flash memory and 64 Kbit of EEPROM memory. Each space is independant for writing, in concurrent mode the Flash Memory can be read while the EEPROM is being written. Table 1. Signal Names
A0-A17 DQ0-DQ7 EE EF G W VCC VSS Address Inputs Data Input / Outputs
TSOP32 (NA) 8 x 20 mm
TSOP32 (NB) 8 x 14 mm
Figure 1. Logic Diagram
VCC
18 A0-A17 W EE EF G M39208
8 DQ0-DQ7
EEPROM Block Enable Flash Block Enable Output Enable Write Enable Supply Voltage Ground
VSS
AI02589
February 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M39208
Table 2. Absolute Maximum Ratings (1)
Symbol TA TBIAS TSTG VIO (2) VCC VA9, VG, VEF
(2)
Parameter Ambient Operating Temperature Temperature Under Bias Storage T...
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