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MHW930 Dataheets PDF



Part Number MHW930
Manufacturers Motorola
Logo Motorola
Description 30 W 925.960 MHz RF POWER AMPLIFIER
Datasheet MHW930 DatasheetMHW930 Datasheet (PDF)

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW930/D UHF Silicon FET Power Amplifier Designed specifically for the Pan European Digital Extended EGSM base station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt supply and requires 60 mW of RF input power. • Specified 26 Volt and 25 °C Characteristics: RF Input Power: 60 mW Max RF Power Gain: 27 dB Min at 30 W Output Power RF Output: 30 Watts Min at 1.0 dB Compression Point Efficiency: 44% Min at .

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW930/D UHF Silicon FET Power Amplifier Designed specifically for the Pan European Digital Extended EGSM base station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt supply and requires 60 mW of RF input power. • Specified 26 Volt and 25 °C Characteristics: RF Input Power: 60 mW Max RF Power Gain: 27 dB Min at 30 W Output Power RF Output: 30 Watts Min at 1.0 dB Compression Point Efficiency: 44% Min at 30 Watts Output Power • 50 Ohm Input/Output Impedances MHW930 30 W 925 – 960 MHz RF POWER AMPLIFIER CASE 301AB–02, STYLE 1 MAXIMUM RATINGS Rating DC Supply Voltage DC Bias Voltage RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Range Symbol VS VB Pin Pout TC Tstg Value 28 28 22 50 – 10 to + 100 – 30 to + 100 Unit Vdc Vdc dBm W °C °C ELECTRICAL CHARACTERISTICS (VS = 26 Vdc; VBIAS = 26 Vdc; TC = +25°C; 50 Ω system) Characteristic Frequency Range VS1 Quiescent Current (Pin = 0 mW) VS2 Quiescent Current (Pin = 0 mW) Power Gain (Pout = 30 W) (1) Output Power at 1 dB Compression EFficiency (Pout = 30 W) (1) Input VSWR Harmonic 2 fo (Pout = 30 W) (1) Harmonic 3 fo (Pout = 30 W) (1) Reverse Intermodulation Distortion (Pcarrier = 30 W; Pinterferer at –70 dBc; fi = fc ± 600 kHz) (1) Load Mismatch Stress (Pout = 30 W; Load VSWR = 10:1; All Phase Angles) Stability (Pout = 10 mW – 30 W; Load VSWR = 3:1; All Phase Angles; TC = –10°C to 85°C) (1) Adjust Pin for specified Pout. Symbol BW Iqs1 Iqs2 Gp P1dB η VSWRIN H2 H3 IMR ψ Min 925 — — 27 30 44 — — — — Typ — 65 130 — 35 49 — — — — Max 960 — — 31 — — 2:1 –35 –45 –80 dBc dBc dBc Unit MHz mA mA dB Watts % No Degradation in Output Power All Spurious Outputs More than 70 dB Below Desired Signal MOTOROLA RF DEVICE DATA © Motorola, Inc. 1997 MHW930 1 Vbias RF IN VS1 VS2 RF OUT Figure 1. MHW930 Internal Diagram MHW930 2 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –A– Y G –B– 0.89 (0.035) M T A M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION F TO CENTER OF LEADS. 4. REF INDICATES NON–CONTROLLED DIMENSION FOR REFERENCE USE ONLY. INCHES MIN MAX 1.890 1.910 1.170 1.190 0.350 0.376 0.018 0.022 0.120 0.135 0.165 BSC 1.600 BSC 1.055 BSC 0.336 0.360 0.225 ––– 0.255 BSC 0.955 BSC 0.008 0.012 0.151 0.161 0.685 0.705 0.598 0.612 0.155 BSC 0.355 BSC 0.210 REF MILLIMETERS MIN MAX 48.01 48.51 29.72 30.23 8.89 9.55 0.46 0.56 3.05 3.43 4.19 BSC 40.64 BSC 26.80 BSC 8.53 9.14 5.72 ––– 6.48 BSC 24.26 BSC 0.20 0.31 3.84 4.09 17.40 17.91 15.19 15.55 3.94 BSC 9.02 BSC 5.33 REF R J K 1 2 3 4 5 –S– Q 2 PL 0.50 (0.020) M T S N H V L W 0.25 (0.010) M T S M A M D 5 PL 0.64 (0.025) M T B DIM A B C D E F G H J K L N P Q R S V W Y E –T– SEATING PLANE F C P 5 PL 0.25 (0.010) M STYLE 1: PIN 1. 2. 3. 4. 5. CASE: RF INPUT +DC (BIAS) +DC (SUPPLY) +DC (SUPPLY) RF OUTPUT GROUND T CASE 301AB–02 ISSUE H Motorola reserves the right.


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