MHW916

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW916/D UHF Silicon FET Power Amplifier Designed specifically for the European Digital Extended Group Special Mobile (GSM) Base Station applications in the 925–960 MHz frequency range. MHW916 operates from a 26 Volt supply and requires 15.5 dBm of RF input power. Specified 26 Volt Characteristics RF Input Power: 15.5 dBm Max RF Output Power: 16 Watts at 1.0 dB Compression Point Minimum Gain: 26.5 dB Harmonics: –35 dBc Max at 2Fo 50 Ω Input/Output System Meet GSM Linearity Specification for Base Station up to 12.5 Watts MHW916 16 WATT 925–960 MHz RF POWER AMPLIFIER CASE 301AB– 02, STYLE 1 MAXIMUM RATINGS Parameter DC Supply Voltage DC Bias Voltage RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Range Standby Current (Pin Removed, Istdby = IS1 + IS2) Symbol VS VB Pin Pout TC Tstg Istdby Value 28 16 19 25 – 5.0 to +85 – 30 to +100 400 Unit Vdc Vdc dBm W °C °C mA ELECTRICAL CHARACTERISTICS (TC = 25°C, VS1 = VS2 = 26 Vdc, Vbias = 15 Vdc, 50 ohm system) Characteristic Frequency Range Quiescent Current (Pin = 0 mW) Power Gain (Pout = 16 W) (1) Output Power at 1.0 dB Compression Efficiency (1.0 dB Compression Power) Efficiency (Pout = 16 W) (1) Input VSWR (Pout = 16 W) (1) Harmonic 2 fo (Pout = 16 W) (1) Harmonic 3 fo (Pout = 16 W) (1) Ripple (Pout = 16 W) (1) Load Mismatch Stress (Pout = 16 W) Load VSWR = 5:1, All Phase Angles Stability (Pout = 10 mW to 16 W) Lo...