MHPA19010

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHPA19010/D The RF Line PCS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. Typical CDMA Performance: 1960 MHz, 28 Volts IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Adjacent Channel Power: –51 dBc @ 30 dBm, 885 kHz Channel Spacing Power Gain: 24.5 dB Min (@ f = 1960 MHz) Excellent Phase Linearity and Group Delay Characteristics 0.2 dB Typical Gain Flatness Ideal for Feedforward Base Station Applications MHPA19010 1930–1990 MHz 10 W, 24.5 dB RF HIGH POWER LDMOS AMPLIFIER Freescale Semiconductor, Inc... CASE 301AP–02, STYLE 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power (Single Carrier CW) Storage Temperature Range Operating Case Temperature Range Quiescent Bias Current Symbol VDD Pin Tstg TC IDQ Value 30 +20 –40 to +100 –20 to +100 750 Unit Vdc dBm °C °C mA ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 600 mA, TC = 25°C, 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Noise Figure (f = 1960 MHz) (f = 1930–1990 MHz) (f = 1960 MHz) (f = 1...