MHL19926

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHL19926/D The RF Line PCS Band RF Linear LDMOS Amplifier Designed for ultra--linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA, EDGE and CDMA. Third Order Intercept Point: 50 dBm Typ Power Gain: 29.4 dB Typ (@ f = 1960 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Application MHL19926 1930-1990 MHz, 10 W, 29.4 dB RF LINEAR LDMOS AMPLIFIER Freescale Semiconductor, Inc... CASE 301AY-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +17 --40 to +100 --20 to +100 Unit Vdc dBm °C °C ELECTRICAL CHARACTERISTICS (TC = +25°C; VDD = 26 Vdc; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Compression Input VSWR Third Order Intercept Noise Figure (f = 1960 MHz) (f = 1930--1990 MHz) (f = 1960 MHz) (f = 1930--1990 MHz) (f1 =1957 MHz, f2=1962 MHz) (f = 1990 MHz) Symbol IDD Gp GF P1 dB VSWRin ITO NF Min — 28.4 — 39 — 49.5 — Typ 1 29.4 0.3 40 1.2:1 50 4.2 Max 1.05 30.4 0.5 — 1.5:1 — 5 dBm dB Unit A dB dB dBm NOT...