MGW21N60ED

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Preliminary Data Sheet Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. This new E–series introduces an energy efficient, ESD protected, and rugged short circuit device. Industry Standard TO–247 Package High Speed: Eoff = 65 mJ/A typical at 125°C High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V Low On–Voltage — 2.1 V typical at 20 A, 125°C Soft Recovery Free Wheeling Diode is included in the Package Robust High Voltage Termination ESD Protection Gate–Emitter Zener Diodes C MGW21N60ED IGBT IN TO–247 21 A @ 90°C 31 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON–VOLTAGE G G C E E CASE 340K–01, TO–247 AE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C Collector Current — Continuous...