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MGW20N120

ON
Part Number MGW20N120
Manufacturer ON
Description Insulated Gate Bipolar Transistor
Published Apr 27, 2005
Detailed Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Insulated Gate Bipolar Transistor...
Datasheet PDF File MGW20N120 PDF File

MGW20N120
MGW20N120

Overview
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time.
Fast switching characteristics result in efficient operation at high frequencies.
• Industry Standard High Power TO–247 Package with Isolated Mounting Hole • High Speed Eoff: 160 mJ/A typical at 125°C • High Short Circuit Capability – 10 ms minimum • Robust High Vol...


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