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MGW12N120

Part Number	MGW12N120
Manufacturer	ON
Description	Insulated Gate Bipolar Transistor
Published	Apr 27, 2005
Detailed Description	MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor...
Datasheet	MGW12N120 PDF File

Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives.
Fast switching characteristics result in efficient operation at high frequencies.
• Industry Standard High Power TO–247 Package with Isolated Mounting Hole • High Speed Eoff: 150 mJ/A typical at 125°C • High Short Circuit Capability – 10...

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