MGW12N120

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Industry Standard High Power TO–247 Package with Isolated Mounting Hole High Speed Eoff: 160 mJ/A typical at 125°C High Short Circuit Capability – 10 ms minimum Robust High Voltage Termination C ™ Data Sheet MGW12N120 Motorola Preferred Device IGBT IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED G G E C E CASE 340F–03, Style 4 TO–247AE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient Maximum Lead Temperatu...