MGSF1N02EL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1N02ELT1/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistor Part of the GreenLine™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life 1 GATE MGSF1N02ELT1 Motorola Preferred Device N–CHANNEL LOGIC LEVEL ENHANCEMENT–MODE TMOS MOSFET ™ 3 3 DRAIN 1 2 CASE 318–08, Style 21 SOT–23 (TO–236AB) Miniature SOT–23 Surface Mount Package Saves Board Space 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RθJA TL Value 20 ± 8.0 750 2000 400 – 55 to 150 300 260 Unit Vdc Vdc mA mW °C °C/W °C ORDERING INFORMATION Device MG...