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MGP4N60E

Motorola

Insulated Gate Bipolar Transistor


Description
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP4N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically su...



Motorola

MGP4N60E

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