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MGP21N60E

Part Number	MGP21N60E
Manufacturer	Motorola
Description	Insulated Gate Bipolar Transistor
Published	Apr 27, 2005
Detailed Description	MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP21N60E/D Insulated Gate Bipolar Transistor...
Datasheet	MGP21N60E PDF File

Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP21N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on).
It also provides fast switching characteristics and results in efficient operation at high frequencies.
This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.
• • • • • • Industry Standard TO–220 ...

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MGP21N60E Insulated Gate Bipolar Transistor - Motorola

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