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PHX8ND50E

Part Number	PHX8ND50E
Manufacturer	NXP
Description	PowerMOS transistors FREDFET/ Avalanche energy rated
Published	Mar 22, 2005
Detailed Description	Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES • Repetitiv...
Datasheet	PHX8ND50E PDF File

Overview

Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package • Fast reverse recovery diode PHX8ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 4.
2 A g RDS(ON) ≤ 0.
85 Ω s trr = 180 ns SOT186A GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circu...

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PHX8ND50E PowerMOS transistors FREDFET/ Avalanche energy rated - NXP

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