PHX6ND50E

Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Isolated package Fast reverse recovery diode PHX6ND50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 3.1 A g RDS(ON) ≤ 1.5 Ω s trr = 180 ns SOT186A GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHX6ND50E is supplied in the SOT186A full pack, isolated package. PINNING PIN 1 2 3 case gate drain source isolated DESCRIPTION case 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current1 Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Ths = 25 ˚C; VGS = 10 V Ths = 100 ˚C; VGS = 10 V Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 500 500 ± 30 3.1 2 24 35 150 UNIT V V V A A A W ˚C August 1998 1 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated AVALA...