PHX6NA60E

Philips Semiconductors Objective specification PowerMOS transistors Low capacitance Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching Low feedback capacitance Stable off-state characteristics High thermal cycling performance Low thermal resistance PHX6NA60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 3.9 A RDS(ON) ≤ 1.2 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX6NA60E is supplied in the SOT186A full pack, isolated package. PINNING PIN 1 2 3 case gate drain source isolated DESCRIPTION SOT186A case 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Ths = 25 ˚C; VGS = 10 V Ths = 100 ˚C; VGS = 10 V Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 600 600 ± 30 3.9 2.6 26 45 150 UNIT V V V A A A W ˚C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR Single pulse avalanche energy Repetitive...