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PHX3N50E Dataheets PDF



Part Number PHX3N50E
Manufacturers NXP
Logo NXP
Description PowerMOS transistors Avalanche energy rated
Datasheet PHX3N50E DatasheetPHX3N50E Datasheet (PDF)

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX3N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 2.1 A RDS(ON) ≤ 3 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies,.

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX3N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 2.1 A RDS(ON) ≤ 3 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX3N50E is supplied in the SOT186A full pack, isolated package. PINNING PIN 1 2 3 case gate drain source isolated DESCRIPTION SOT186A case 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Ths = 25 ˚C; VGS = 10 V Ths = 100 ˚C; VGS = 10 V Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 500 500 ± 30 2.1 1.3 14 30 150 UNIT V V V A A A W ˚C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS MIN. MAX. 212 UNIT mJ Unclamped inductive load, IAS = 2.1 A; tp = 0.31 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 3.4 A; tp = 2.5 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current EAR IAS, IAR - 5.5 3.4 mJ A 1 pulse width and repetition rate limited by Tj max. December 1998 1 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. PHX3N50E MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. MAX. UNIT 55 4.1 K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage ∆V(BR)DSS / Drain-source breakdown ∆Tj voltage temperature coefficient RDS(ON) Drain-source on resistance VGS(TO) Gate threshold voltage gfs Forward transconductance IDSS Drain-source leakage current IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ls Ciss Coss Crss V(BR)DSS CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA MIN. 500 2.0 1 TYP.


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