PHX3055E

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHX3055E FEATURES ’Trench’ technology Low on-state resistance Fast switching Isolated mounting tab SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 9 A g RDS(ON) ≤ 150 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope with an electrically isolated mounting tab. The device uses ’trench’ technology to achieve low on-state resistance. Applications: d.c. to d.c. converters switched mode power supplies The PHX3055E is supplied in the SOT186A (isolated TO220AB) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source isolated DESCRIPTION SOT186A case 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 55 55 ± 20 9 5.6 36 21 150 UNIT V V V A A A W ˚C ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 2500 U...