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PHW9N60E

Part Number	PHW9N60E
Manufacturer	NXP
Description	PowerMOS transistors Avalanche energy rated
Published	Mar 22, 2005
Detailed Description	Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanc...
Datasheet	PHW9N60E PDF File

Overview

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB9N60E, PHW9N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 8.
7 A RDS(ON) ≤ 0.
8 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The PHW9N60E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB9N60E ...

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