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PHT11N06LT

Part Number	PHT11N06LT
Manufacturer	NXP
Description	TrenchMOS transistor Logic level FET
Published	Mar 22, 2005
Detailed Description	Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhan...
Datasheet	PHT11N06LT PDF File

Overview

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.
The device features very low on-state resistance and has integral zener diodes giving ESD protection.
It is intended for use in DC-DC converters and general purpose switching applications.
PHT11N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX.
55 10.
7 4.
9 8.
3 150 40 UNIT V A A...

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