PHP9NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20T QUICK REFERENCE DATA d FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL VDSS = 200 V ID = 8.7 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP9NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package The PHB9NQ20T is supplied in the SOT404 (D2PAK) surface mounting package The PHD9NQ20T is supplied in the SOT428 (DPAK) surface mounting package PINNING PIN 1 2 3 tab DESCRIPTION gate drain 1 source SOT78 (TO220AB) tab SOT404 (D2PAK) tab SOT428 (DPAK) tab 2 1 23 2 1 3 1 3 drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 200 200 ± 20 8.7 6.2 35 88 175 UNIT V V V A A A W ˚C 1 It is not possible to make...