PHP54N06T
N-channel TrenchMOS standard level FET
Rev. 02 — 14 December 2009
Product data sheet
1. Product profile
1.1...
PHP54N06T
N-channel TrenchMOS standard level FET
Rev. 02 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3
-
-
55 V
-
-
54 A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
118 W
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 40 A;
VDS = 44 V; Tj = 25 °C;
see Figure 13
-
11.5 -
nC
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A;
-
Tj = 175 °C; see Figure 11 and 12
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 and 12
-
40 mΩ
17 20 mΩ
NXP Semiconductors
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to drain
PHP54N06T
N-channel TrenchMOS standard level FET
Simplified outline
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