PHP47NQ10T

PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 16 May 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP47NQ10T in SOT78 (TO-220AB) PHB47NQ10T in SOT404 (D2-PAK). 2. Features s Fast switching s Very low on-state resistance. 3. Applications s DC to DC converters s Switched mode power supplies. c 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 1 MBK106 Simplified outline mb mb Symbol [1] d g 2 3 MBK116 MBB076 s 1 2 3 SOT78 (TO-220AB) [1] 1. SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Tj = 25 °C; VGS = 10 V; ID = 25 A Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C Typ − − − − 20 Max 100 47 166 175 28 Unit V A W °C mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter dra...