Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PHP3055E, PHD3055E
FEATURES
• ’Trench’ ...
Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
PHP3055E, PHD3055E
FEATURES
’Trench’ technology Low on-state resistance Fast switching
SYMBOL
d
QUICK REFERENCE DATA VDSS = 55 V ID = 10.3 A
g
RDS(ON) ≤ 150 mΩ (VGS = 10 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode, field-effect power
transistor in a plastic envelope using ’trench’ technology. Applications: d.c. to d.c. converters switched mode power supplies The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN 1 2 3 tab gate drain1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT428 (DPAK)
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 55 55 ± 20 10.3 7.3 41 33 175 UNIT V V V A A A W ˚C
1 It is not possible to make connection to pin:2 of the SOT428 package August 1999 1 Rev 1.200
Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
PHP3055E PHD3055E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Ma...