PHP2N60

Philips Semiconductors Product specification -------------------------------------------------------------------------------------------------------------PowerMOS transistor PHP2N60 ---------------------------------------------------------------------------------------------------------------------------------------------------------- GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK REFERENCE DATA SYMBOL ---------------VDS ID Ptot RDS(ON) PARAMETER MAX. UNIT ------------------------------------------------------- ----------- ----------Drain-source voltage 600 V Drain current (DC) 2.8 A Total power dissipation 83 W Drain-source on-state resistance 4.4 Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ID IDM PD ∆PD/∆Tmb VGS EAS IAS Tj, Tstg Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VG...