PHP225

DISCRETE SEMICONDUCTORS DATA SHEET PHP225 Dual P-channel enhancement mode MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification Dual P-channel enhancement mode MOS transistor FEATURES High-speed switching No secondary breakdown Very low on-resistance. APPLICATIONS Motor and actuator driver Power management Synchronized rectification. DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 1 4 s1 g 1 d1 d1 5 PHP225 PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s1 g1 s2 g2 d2 d2 d1 d1 DESCRIPTION source 1 gate 1 source 2 gate 2 drain 2 drain 2 drain 1 drain 1 handbook, halfpage d2 d2 8 MAM119 s2 g 2 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL Per P-channel VDS VSD VGSO VGSth ID RDSon Ptot drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −1 A; VGS = −10 V Ts = 80 °C IS = −1.25 A open drain ID = −1 mA; VDS = VGS − − − −1 − − − −30 −1.6 ±20 −2.8 −2.3 0.25 2 V V V V A Ω W PARAMETER CONDITIONS MIN. MAX. UNIT 1997 Jun 20 2 Philips Semiconductors Product specification Dual P-cha...