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PHP1N60E

NXP
Part Number PHP1N60E
Manufacturer NXP
Description PowerMOS transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Objective Specification PowerMOS transistor PHP1N60E GENERAL DESCRIPTION N-channel enhancemen...
Datasheet PDF File PHP1N60E PDF File

PHP1N60E
PHP1N60E

Overview
Philips Semiconductors Objective Specification PowerMOS transistor PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance.
Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
600 1.
9 50 6 UNIT V A W Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DES...


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