DISCRETE SEMICONDUCTORS
DATA SHEET
PHP125 P-channel enhancement mode MOS transistor
Product specification Supersedes da...
DISCRETE SEMICONDUCTORS
DATA SHEET
PHP125 P-channel enhancement mode MOS
transistor
Product specification Supersedes data of 1996 Apr 02 File under Discrete Semiconductors, SC13b 1997 Jun 18
Philips Semiconductors
Product specification
P-channel enhancement mode MOS
transistor
FEATURES High-speed switching No secondary breakdown Very low on-resistance. APPLICATIONS Motor and actuator driver Power management Synchronized rectification.
1 4 n.c. s
handbook, halfpage
PHP125
DESCRIPTION P-channel enhancement mode MOS
transistor in an 8-pin plastic SO8 (SOT96-1) package.
d 5
d d d
8
PINNING - SO8 (SOT96-1) PIN 1 2 3 4 5 6 7 8 SYMBOL n.c. s s g d d d d DESCRIPTION not connected source source gate drain drain drain drain CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol.
MAM115
s
g
QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −1 mA; VDS = VGS Ts = 80 °C ID = −1 A; VGS = −10 V Ts = 80 °C IS = −1.25 A CONDITIONS − − − −1 − − − MIN. MAX. −30 −1.6 ±20 −2.8 −2.5 0.25 2.8 V V V V A Ω W UNIT
1997 Jun 18
2
Philips Semiconductors
Product specification
P-channel enhancement mode MOS
transistor
LIMITING VALUES In ...