Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Ava...
Philips Semiconductors
Preliminary specification
PowerMOS
transistors Avalanche energy rated
FEATURES
Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance
PHP11N50E, PHB11N50E, PHW11N50E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 500 V
g
ID = 10.4 A RDS(ON) ≤ 0.6 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power
transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP11N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package. The PHB11N50E is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION gate drain1 source
SOT78 (TO220AB)
tab
SOT404
tab
SOT429 (TO247)
2
drain
1 23
1
3
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 500 500 ± 30 10.4 6.6 42 156 150 UNIT V V V A A A W...