PHP109

DISCRETE SEMICONDUCTORS DATA SHEET PHP109 P-channel enhancement mode MOS transistor Product specification Supersedes data of 1996 Jun 11 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES High-speed switching No secondary breakdown Very low on-resistance. APPLICATIONS Motor and actuator driver Power management Synchronized rectification. DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. handbook, 8 halfpage PHP109 PINNING - SO8 (SOT96-1) PIN 1 2 3 4 5 6 7 8 SYMBOL n.c. s s g d d d d source source gate drain drain drain drain DESCRIPTION not connected 5 d d d d 1 4 MAM115 n.c. s s g Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −1 mA; VDS = VGS Ts = 80 °C ID = −2.5 A; VGS = −10 V Ts = 80 °C IS = −1.25 A CONDITIONS − − − −1 − − − MIN. MAX. −30 −1.3 ±20 −2.8 −5 0.09 4 V V V V A Ω W UNIT 1997 Jun 18 2 Philips Semiconductors Product specification P-channel enhancement mode MOS transistor LIMITING VALUES I...