PHP/PHU101NQ03LT
TrenchMOS™ logic level FET
Rev. 02 — 25 February 2003 Product data
1. Description
N-channel logic leve...
PHP/PHU101NQ03LT
TrenchMOS™ logic level FET
Rev. 02 — 25 February 2003 Product data
1. Description
N-channel logic level field-effect power
transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 (TO-220AB) PHU101NQ03LT in SOT533 (I-PAK).
2. Features
s Low gate charge s Low on-state resistance.
3. Applications
s Optimized as a control FET in DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT78, SOT533 simplified outline and symbol Simplified outline
mb
Pin Description 1 2 3 mb gate (g)
Symbol
d
drain (d) source (s) mounting base, connected to drain (d)
g s
MBB076
MBK106
1 Top view
2
3
MBK915
1 2 3
SOT78 (TO-220AB)
SOT533 (I-PAK)
Philips Semiconductors
PHP/PHU101NQ03LT
TrenchMOS™ logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 10 V; ID = 25 A Tj = 25 °C; VGS = 5 V; ID = 25 A Typ 4.5 5.8 Max 30 75 166 175 5.5 7.0 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) gate-source voltage drain current (DC) peak drain current tot...
