an AMP
company
CW Power Transistor, 30 - 400 MHz
Features
NPN Silicon Power Transistor Common Emitter Configuration Cl...
an AMP
company
CW Power
Transistor, 30 - 400 MHz
Features
NPN Silicon Power
Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios
16W
PHOI 04-I 6
Absolute Maximum Ratings at 25°C
Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation 1 JunctionTemperature Storage Temperature Thermal Resistance 1 Symbol VCES VES0 ‘c P* T, Ts-r0 eJC \ Rating 65 4.0 2 63 200 -4oto+125 2.1 I Units V V A W “C “C “Cl-W
UNLfSS 37HERWISE NOT3 TOLERANXS ARE INCHES (F(ILLI~ETERS S.OOS =,13Hr)
I
Electrical Characteristics at 25°C
Parameter Collector-Emitter Breakdown Voltage Base-Emitter Breakdown Voltage Collector-Emitter Leakaoe Current DC Forward Current Gain Input Power Power Gain _ Coilector Efficiency Input Return Loss Load Mismatch Tolerance Symbol BV,,, BVEoO
IA-c
Min 65 4.0
Max -
Units V V I,=5 mA, V,,=O.O V 1,=2.5 mA, I,=O.OA v-,=30 v V,,=5.0 V. I,=500 mA
lest Conditions
1
mA w dB % dB -
hFE PIN GP
?C
20 ’ 9.0 40 9 ’
Bo 2.0 3:l
V,,=27 V, I,,=10 mA, PO,=16 W, F=400 MHz V,,=27 V, I,,=1 0 mA, POUT=1 6 W, F=400 MHz V,,=27 V, I,,=1 0 mA, P,,$6 V,,=27 V, I,=1 0 mA, Poti V,,=27 V, I,,=10 mA, P,&6 W, F=400 MHz W, F=400 MHz W, F=400 MHz
RL VSWR-T
Specifications Subject to Change Without Notice.
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