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PHN210
Dual N-channel enhancement mode TrenchMOS transistor
Description
Philips Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM
transistor
FEATURES Dual device Low threshold voltage Fast switching Logic level compatible Surface mount package PHN210 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 30 V ID = 3.4 A RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s1 g1 s2 g2 ...
NXP
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