MASWSS0024

SPDT High Isolation Terminated Switch, 0.5 - 3.0 GHz V 1.00 MASWSS0024 Features Positive Voltage Control (0 / +5 V) High Isolation (53 dB typ. @ 0.9 GHz, 50 dB typ @ 1.9 GHz) n 50-Ohm Internal Terminations n Low Insertion Loss (0.6 dB typ. @ 0.9 GHz, 0.7 dB typ. @ 1.9 GHz) n MSOP-8-EP Package n n Functional Block Diagram RF1 RFC Description The M/A-COM MASWSS0024 GaAs monolithic switch provides high isolation in a low-cost, plastic surface mount package. The MASWSS0024 is ideal for applications across a broad range of frequencies including synthesizer switching, transmit / receive switching, switch matrices and filter banks in systems such as radio and cellular equipment, PCS, GPS, and fiber optic modules. M/A-COM fabricates the MASWSS0024 using an 0.5micron gate length MESFET process. The process features full chip passivation for performance and reliability. RF2 Pin Configuration Pin 1 2 3 4 Function V1 V2 RFC GND Pin 5 6 7 8 Function RF2 GND GND RF1 Handling Procedures The following precautions should be observed to avoid damage: Absolute Maximum Ratings 1 Parameter Max Input Power (0.5 - 3.0 GHz) 3V Control 5V Control Operating Voltage Operating Temperature Storage Temperature Absolute Maximum Static Sensitivity Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when handling these devices. +30 dBm +33 dBm +8.5 Volts -40°C to +85°C -65°C to +150°C 1. Operation of this device above any o...