PHKD6N02LT

PHKD6N02LT Dual TrenchMOS™ logic level FET M3D315 Rev. 02 — 12 August 2003 Product data 1. Description Dual N-channel enhancement mode field-effect transistors in a plastic surface mount package using TrenchMOS™ technology. Product availability: PHKD6N02LT in SOT96-1 (SO8). 2. Features s s s s Low on-state resistance Logic level compatible Dual device Surface mount package. 3. Applications s s s s DC-to-DC converters Notebook computers Portable appliances Battery chargers. 4. Pinning information Table 1: Pin 1 2 3 4 5, 6 7, 8 Pinning - SOT96-1 (SO8), simplified outline and symbol Description source1 (s1) gate1 (g1) source2 (s2) gate2 (g2) drain2 (d2) drain1 (d1) 1 Top view 4 MBK187 Simplified outline 8 5 Symbol d1 d1 d2 d2 SOT96-1 (SO8) s1 g 1 s2 g 2 MBK725 Philips Semiconductors PHKD6N02LT Dual TrenchMOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C Tsp = 25 °C VGS = 5 V; ID = 3 A VGS = 2.5 V; ID = 3 A [1] Single device conducting. [1] Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Typ 16 25 Max 20 10.9 4.17 150 20 35 Unit V A W °C mΩ mΩ 6. Ordering information Table 3: Ordering information Package Name PHKD6N02LT SO8 Description Plastic small outline package; 8 leads Version SOT96-1 Type number 7. Limiting values Table 4: Limiting values In accordance with the Absolute Maxi...