,z== i--s L-J =7 f
.------
z z = =
*
an AMP company
Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 2...
,z== i--s L-J =7 f
.------
z z = =
*
an AMP company
Radar Pulsed Power
Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power
Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry Diffused Emirter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic~MetalKeramic Package
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating 27 20 3.5 Units
t------T')JFH!T-T.J
V V V mA W I “C
“C
‘3 I .3?>= 310 C9.>3Z.>3) I
I
Collector-Emitter Voltage Collector-Emitter Voltage Emitter-BaseVoltage Collector Current (Peak) Total Power Dissipation JunctionTemperature Storage Temperature (
!
VCES v CEO VES0 ‘c P7-7 T,
T STG
I
,137~4:: ~BZ.15)
710
7.8
.004z.051
(
200
-65 to +200
I
INCifS =035’ AXE CM:LLlHEiE?S =.:3!4M)
Electrical Characteristics
at 25°C
UL-‘SS 7-ERW!SE
NDTCD, -JL’RANCES
I
I
V,,,=22, V,,(typ)=l 1.5,l,,(typ)=ZOO mA __ _%
Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stablility
% RL VSWR-T VSWR-S
30
~,,=100mW, F=l.ZO, 1.30, 1.40GI-l~
I
9 -
2:l
dB
-
1.51
-
Broadband Test Fixture Impedances
-fST F!XTLIRT ZIRCUIT I
F(GHz)
Z,,(Q)
ZOF&v
1.20 1.30 1.40
5.9 - j4.5
6.4 - j4.0
7.4 + j6.3 7.5 + j7.7 7.4 + j8.9 5sn
A IZiF.
7.1 - j4.4
Specifications Subject to Change Without Notice.
9-112
North America: Tel. (800) 366-2266
Fax (800) 618-8883
n
MIA-COM,
Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-...
