DatasheetsPDF.com

PHF9NQ20 Dataheets PDF



Part Number PHF9NQ20
Manufacturers NXP
Logo NXP
Description N-channel TrenchMOS transistor
Datasheet PHF9NQ20 DatasheetPHF9NQ20 Datasheet (PDF)

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 5.2 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. co.

  PHF9NQ20   PHF9NQ20


Document
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 5.2 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package PINNING PIN 1 2 3 case gate drain source isolated DESCRIPTION SOT186A (FPAK) case SOT186 (FPAK) case 1 2 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Ths = 25 ˚C; VGS = 10 V Ths = 100 ˚C; VGS = 10 V Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 200 200 ± 20 5.2 3.3 21 25 150 UNIT V V V A A A W ˚C November 2000 1 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy Peak non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 7.2A; tp = 100 µs; Tj prior to avalanche = 25˚C; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer to fig;15 MIN. MAX. 93 UNIT mJ IAS - 8.7 A THERMAL RESISTANCES SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT186A package, in free air TYP. MAX. UNIT 55 5 K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) gfs IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Forward transconductance Gate source leakage current Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 150˚C Tj = -55˚C VGS = 10 V; ID = 4.5 A Tj = 150˚C VDS = 25 V; ID = 4.5 A VGS = ± 10 V; VDS = 0 V VDS = 200 V; VGS = 0 V Tj = 150˚C ID = 9 A; VDD = 160 V; VGS = 10 V MIN. 200 178 2 1 3.8 TYP. MAX. UNIT 3 300 6 10 0.05 24 4 12 8 19 25 15 4.5 7.5 959 93 54 4 6 400 0.94 100 10 500 V V V V V mΩ Ω S nA µA µA nC nC nC ns ns ns ns nH nH pF pF pF VDD = 100 V; RD = 10 Ω; VGS = 10 V; RG = 5.6 Ω Resistive load Measured from drain lead to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz November 2000 2 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 9 A; VGS = 0 V IF = 9 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 25 V TYP. MAX. UNIT 0.85 92 0.5 8.7 35 1.2 A A V ns µC ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink Repetitive peak voltage from all three terminals to external heatsink Capacitance from pin 2 to external heatsink CONDITIONS SOT186A package; f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65%; clean and dustfree SOT186 package; R.H. ≤ 65%; clean and dustfree f = 1 MHz MIN. TYP. MAX. 2500 UNIT V Visol - 1500 V Cisol - 10 - pF November 2000 3 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound 10 Transient thermal impedance, Zth j-a (K/W) D = 0.5 0.2 1 0.1 0.05 0.02 0.1 single pulse 0.01 1E-06 0 20 40 60 80 Ths / C 100 120 140 1E-05 1E-04 1E-03 1E-02 1E-01 Pulse width, tp (s) 1E+00 1E+01 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) Normalised Current Derating with heatsink compound Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Drain Current, ID (A) Tj = 25 C VGS = 10V 8V 5.5 V 6V 120 110 100 90 80 70 60 50 40 30 20 10 0 ID% 10 9 8 .


PHF14NQ20T PHF9NQ20 PHF9NQ20T


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)