PHE13009

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V TYP. 0.32 0.1 MAX. 700 700 400 12 24 80 1.0 40 0.5 UNIT V V V A A W V µs Tmb ≤ 25 ˚C IC = 5.0 A;IB = 1.0 A IC = 5.0 A; VCE = 5 V IC = 5.0 A; IB1 = 1.0 A PINNING - TO220AB PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 12 24 6 12 80 150 150 UNIT V V V A A A A W ˚C ˚C Tmb ≤ 25 ˚C ...