PHE13005

TO-220AB PHE13005 Silicon diffused power transistor 21 January 2014 Product data sheet 1. General description High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications 2. Features and benefits Fast switching High voltage capability of 700 V Low thermal resistance 3. Applications Electronic lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current DC; Fig. 4; Fig. 1; Fig. 2 Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3 VCESM collector-emitter peak VBE = 0 V voltage Static characteristics hFE DC current gain IC = 1 A; VCE = 5 V; Tmb = 25 °C; Fig. 11 IC = 2 A; VCE = 5 V; Tmb = 25 °C; Fig. 11 Min Typ Max Unit - - 4A - - 75 W - - 700 V 12 20 40 10 17 28 Scan or click this QR code to view the latest information for this product NXP Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector PHE13005 Silicon diffused power transistor Graphic symbol C B E sym123 123 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name PHE13005 TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 7. Limiting values Table 4. Limiti...