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PHE13002AU

Part Number	PHE13002AU
Manufacturer	NXP
Description	Silicon Diffused Power Transistor
Published	Mar 22, 2005
Detailed Description	Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-v...
Datasheet	PHE13002AU PDF File

Overview

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP.
0.
27 12 56 MAX.
600 600 3...

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PHE13002AU Silicon Diffused Power Transistor - NXP

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