PHD9NQ20T
N-channel TrenchMOS standard level FET
Rev. 03 — 16 December 2010
Product data sheet
1. Product profile
1.1...
PHD9NQ20T
N-channel TrenchMOS standard level FET
Rev. 03 — 16 December 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
DC-to-DC converters General purpose switching Motor control circuits
Off-line switched-mode power supplies
TV and computer monitor power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C
Min Typ Max Unit - - 200 V - - 8.7 A - - 88 W
VGS = 10 V; ID = 4.5 A; Tj = 25 °C
- 300 400 mΩ
VGS = 10 V; ID = 9 A;
- 12 - nC
VDS = 160 V; Tj = 25 °C
NXP Semiconductors
PHD9NQ20T
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb
Pinning information
Symbol Description
Simplified outline
G gate D drain[1]
mb
S source
D mounting base; connecte...