PHD83N03LT

PHD83N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD83N03LT in a SOT428 (D-PAK). 2. Features s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT428, simplified outline and symbol c Description gate (g) Simplified outline mb Symbol d drain (d) source (s) mounting base, connected to drain (d) [1] g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-Pak) [1] It is not possible to make connection to pin 2 of the SOT428 package. 1. TrenchMOS is a trademark of Royal Phillips Electronics. Philips Semiconductors PHD83N03LT N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Typ − − − − 6.5 10 Max 25 72 107 175 9 12 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM EAS drain-source ...