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MAC15A6FP Dataheets PDF



Part Number MAC15A6FP
Manufacturers Motorola
Logo Motorola
Description Triac
Datasheet MAC15A6FP DatasheetMAC15A6FP Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Dif.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes (MAC15AFP Series) MAC15FP Series MAC15AFP Series ISOLATED TRIACs THYRISTORS 15 AMPERES RMS 200 thru 800 VOLTS MT2 G MT1 CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC15-4FP, MAC15A4FP MAC15-6FP, MAC15A6FP MAC15-8FP, MAC15A8FP MAC15-10FP, MAC15A10FP On-State RMS Current (TC = +80°C)(2) Full Cycle Sine Wave 50 to 60 Hz (TC = +95°C) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) preceded and followed by rated current Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Current Peak Gate Voltage RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Storage Temperature Range Symbol VDRM 200 400 600 800 IT(RMS) ITSM PGM PG(AV) IGM 15 12 150 20 0.5 2 10 1500 –40 to +125 –40 to +150 Amps Amps Watts Watt Amps Volts Volts °C °C Value Unit Volts p 20%) VGM V(ISO) TJ Tstg 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data 3–63 MAC15FP Series MAC15AFP Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Symbol RθJC RθCS RθJA Max 2 2.2 (typ) 60 Unit °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Blocking Current (Either Direction) TJ = 25°C (VD = Rated VDRM, TJ = 125°C, Gate Open) Peak On-State Voltage (Either Direction) (ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +110°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80°C) QUADRANT DEFINITIONS MT2(+) QUADRANT II MT2(+), G(–) QUADRANT I MT2(+), G(+) Symbol IDRM Min — — — Typ — — 1.3 Max 10 2 1.6 Unit µA mA Volts mA — — — — VGT — — — — 0.2 0.2 IH — 0.9 0.9 1.1 1.4 — — 6 2 2 2 2.5 — — 40 mA — — — — 50 50 50 75 Volts p 2%) VTM IGT tgt — 1.5 — µs dv/dt(c) — 5 — V/µs Trigger devices are recommended for gating on Triacs. They provide: 1. Consistent predictable turn-on points. 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation. ELECTRICAL CHARACTERISTICS of RECOMMENDED BIDIRECTIONAL SWITCHES G(+) Usage Part Number VS MBS4991 6–10 V 350 µA Max 0.5 V Max General MBS4992 7.5–9 V 120 µA Max 0.2 V Max G(–) QUADRANT III MT2(–), G(–) QUADRANT IV MT2(–), G(+) IS VS1–VS2 MT2(–) Temperature Coefficient 0.02%/°C Typ 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. 3–64 Motorola Thyristor Device Data MAC15FP Series MAC15AFP Series TYPICAL CHARACTERISTICS 130 30° 120 60° 90° 110 125°C 150° to 180° α 90 80 0 α α = CONDUCTION ANGLE 2 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) 4 14 16 dc IGTM , , GATE TRIGGER CURRENT (NORMALIZED) 3 2 OFF-STATE VOLTAGE = 12 Vdc ALL MODES TC , CASE TEMPERATURE ( °C) 1 0.7 0.5 100 0.3 –60 –40 –20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) 100 120 140 Figure 1. RMS Current Derating PD(AV) , AVERAGE POWER DISSIPATION (WATTS) 20 16 TJ = 125°C α α 8 α = CONDUCTION ANGL.


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